Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD60R280P7S

Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Adapters and chargers LED lighting system designs LED strips and signage Telecommunication infrastructure Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 1 2
Request a Quote Datasheet
Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Adapters and chargers LED lighting system designs LED strips and signage Telecommunication infrastructure Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD60R280P7S - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD60R280P7S
500V-950V N-Channel Power MOSFET IPD60R280P7S
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Adapters and chargers LED lighting system designs LED strips and signage Telecommunication infrastructure Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1ED3120MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2110S06M | Gate driver ICs 1 2

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.


Summary of Features

Efficiency

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

Ease-of-use

  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

Efficiency

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Potential Applications

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom
  • Lighting

Applications

  • Adapters and chargers
  • LED lighting system designs
  • LED strips and signage
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 1EDI20I12MF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1ED3120MC12H |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1ED3120MC12H |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs

1
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Supplier's Site Datasheet
Misc Products - IPD60R280P7S - 825984-IPD60R280P7S - Win Source Electronics
Laguna Hills, CA, United States
Misc Products - IPD60R280P7S
825984-IPD60R280P7S
Misc Products - IPD60R280P7S 825984-IPD60R280P7S
Manufacturer: Infineon Technologies Win Source Part Number: 825984-IPD60R280P7S Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 825984-IPD60R280P7S
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Limited

Buy Now
Singapore
600V Bipolar Transistor
48-IPD60R280P7S
600V Bipolar Transistor 48-IPD60R280P7S
600V CoolMOSª P7 Power Transistor Product overview: IPD60R280P7S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPD60R280P7S can be used for catalog matching and distributor lookup.

600V CoolMOSª P7 Power Transistor Product overview: IPD60R280P7S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPD60R280P7S can be used for catalog matching and distributor lookup.

Supplier's Site
Transistors - IPD60R280P7S - ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD60R280P7S
Transistors IPD60R280P7S
600V 12A 53W 280mΩ@10V,3.8A 4V@190uA 1 N-Channel TO-252-3 MOSFETs ROHS

600V 12A 53W 280mΩ@10V,3.8A 4V@190uA 1 N-Channel TO-252-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Power MOSFET RF Transistors Bipolar RF Transistors Transistors
Product Number IPD60R280P7S 825984-IPD60R280P7S 48-IPD60R280P7S IPD60R280P7S
Product Name 500V-950V N-Channel Power MOSFET Misc Products - IPD60R280P7S 600V Bipolar Transistor Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.2800 ohms
QG 18 nC
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