Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD60R210PFD7S

Description
600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R210PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R210PFD7S in a TO-252 DPAK package features RDS(on) of 210mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill-of-material (BOM) the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications 48 V intermediate bus converter (IBC) Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2184S06F | Gate driver ICs 1 2
Request a Quote Datasheet
Description
600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R210PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R210PFD7S in a TO-252 DPAK package features RDS(on) of 210mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill-of-material (BOM) the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications 48 V intermediate bus converter (IBC) Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2184S06F | Gate driver ICs 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD60R210PFD7S - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD60R210PFD7S
500V-950V N-Channel Power MOSFET IPD60R210PFD7S
600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R210PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R210PFD7S in a TO-252 DPAK package features RDS(on) of 210mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill-of-material (BOM) the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications 48 V intermediate bus converter (IBC) Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20I12MF | Gate driver ICs 2ED2184S06F | Gate driver ICs 1 2

600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R210PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R210PFD7S in a TO-252 DPAK package features RDS(on) of 210mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill-of-material (BOM) the customer.

This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.


Summary of Features

  • Very low FOM RDS(on) x Eoss
  • Integrated robust fast body diode
  • Up to 2kV ESD protection
  • Wide range of RDS(on) values
  • Excellent commutation ruggedness
  • Low EMI
  • Broad package portfolio

Benefits

  • Minimized switching losses
  • Power density improvement compared to latest CoolMOS™ charger technology
  • Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications
  • BOM cost reduction and easy manufacturing
  • Robustness and reliability
  • Easy to select the right parts for design fine-tuning

Potential Applications

  • Consumer
  • High density Charger and Adapter
  • USB PD
  • Fridge
  • Fans
  • Pumps

Applications

  • 48 V intermediate bus converter (IBC)

Designers who used this product also designed with


  • 1EDI20I12MF |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs

1
2

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPD60R210PFD7S
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.2100 ohms
QG 23 nC
Unlock Full Specs
to access all available technical data