Power Field-Effect Transistor, 12A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-Channel 600V 12A (Tc) 64W (Tc) Surface Mount DPAK (TO-252)
N-Channel 600V 12A (Tc) 64W (Tc) Surface Mount DPAK (TO-252)
N-Channel 600V 12A (Tc) 64W (Tc) Surface Mount DPAK (TO-252)
MOSFET N CH
MOSFET, 600V, 12A, 150DEG C, 64W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.171ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| Rochester Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD60R210CFD7ATMA1 | IPD60R210CFD7ATMA1 | 448-IPD60R210CFD7ATMA1DKR-ND | IPD60R210CFD7ATMA1 | IPD60R210CFD7ATMA1 | 71AC0383 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, 600V, 12A, 150Deg C, 64W; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| rDS(on) | 0.2100 ohms | 0.1710 ohms | ||||
| Package Type | PG-TO252-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
