Power Field-Effect Transistor, 3.6A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-Channel 650V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
N-Channel 650V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
N-Channel 650V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
MOSFET, N-CH, 600V, 3.6A, TO-252/DPAK ROHS COMPLIANT: YES
MOSFET N-CH 600V 3.6A TO252
| Rochester Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPD60R1K5PFD7SAUMA1 | 448-IPD60R1K5PFD7SAUMA1DKR-ND | 91AH7687 | IPD60R1K5PFD7SAUMA1 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 3.6A, To-252/dpak Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel |
