MOSFET N-CHANNEL_30/40V Product overview: IPB80N04S2H4ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80N04S2H4ATMA
Infineon MOSFET IPB80N04S2H4ATMA2
MOSFET N-CHANNEL_30/40V
MOSFET N-CHANNEL_30/40V
MOSFET N-CHANNEL_30/40V
IPB80N04 - 20V-40V N-Channel Automotive MOSFET
MOSFET, N-CH, 40V, 80A, TO-263 ROHS COMPLIANT: YES
MOSFET N-CHANNEL_30/40V
MOSFET N-CHANNEL_30/40V
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Rochester Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPB80N04S2H4ATMA2 | 2172510P | 2172510 | 448-IPB80N04S2H4ATMA2TR-ND | IPB80N04S2H4ATMA2 | IPB80N04S2H4ATMA2 | 38AJ3757 | IPB80N04S2H4ATMA2 | IPB80N04S2H4ATMA2 |
| Product Name | 40V MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 40V, 80A, To-263 Rohs Compliant Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 40 volts | 40 volts | |||||||
| PD | 300 milliwatts | 300000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
