Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R160C6ATMA1 IPB60R160C6ATMA1

Description
Manufacturer: Infineon Technologies Manufacturer: Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs Series: CoolMOS™ C6 Package: Tape & Reel (TR) /Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 176W (Tc) Power Dissipation (Max): IPB60R160
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Description
Manufacturer: Infineon Technologies Manufacturer: Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs Series: CoolMOS™ C6 Package: Tape & Reel (TR) /Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 176W (Tc) Power Dissipation (Max): IPB60R160
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R160C6ATMA1 -  - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R160C6ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R160C6ATMA1
Manufacturer: Infineon Technologies Manufacturer: Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs Series: CoolMOS™ C6 Package: Tape & Reel (TR) /Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 176W (Tc) Power Dissipation (Max): IPB60R160

Manufacturer: Infineon Technologies
Manufacturer: Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series: CoolMOS™ C6
Package: Tape & Reel (TR) /Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 176W (Tc)
Power Dissipation (Max): IPB60R160

Buy Now Datasheet
Singapore
600V 23.8A MOSFET Transistor
278-IPB60R160C6ATMA1
600V 23.8A MOSFET Transistor 278-IPB60R160C6ATMA1
MOSFET N-CH 600V 23.8A D2PAK Product overview: IPB60R160C6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 23.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 23.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R160C6ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 23.8A D2PAK Product overview: IPB60R160C6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 23.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 23.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R160C6ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPB60R160C6ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R160C6ATMA1TR-ND
Single FETs, MOSFETs IPB60R160C6ATMA1TR-ND
N-Channel 600V 23.8A (Tc) 176W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 23.8A (Tc) 176W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R160C6ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R160C6ATMA1CT-ND
Single FETs, MOSFETs IPB60R160C6ATMA1CT-ND
N-Channel 600V 23.8A (Tc) 176W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 23.8A (Tc) 176W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R160C6ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R160C6ATMA1DKR-ND
Single FETs, MOSFETs IPB60R160C6ATMA1DKR-ND
N-Channel 600V 23.8A (Tc) 176W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 23.8A (Tc) 176W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6

MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R160C6ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPB60R160C6ATMA1
Single FETs, MOSFETs IPB60R160C6ATMA1
MOSFET N-CH 600V 23.8A D2PAK

MOSFET N-CH 600V 23.8A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB60R160C6ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB60R160C6ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB60R160C6ATMA1
MOSFET N-CH 600V 23.8A D2PAK

MOSFET N-CH 600V 23.8A D2PAK

Supplier's Site
Mosfet,n Ch,600V,23.8A,to263; Transistor Polarity Infineon - 30T1829 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Ch,600V,23.8A,to263; Transistor Polarity Infineon
30T1829
Mosfet,n Ch,600V,23.8A,to263; Transistor Polarity Infineon 30T1829
MOSFET,N CH,600V,23.8A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

MOSFET,N CH,600V,23.8A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-IPB60R160C6ATMA1 IPB60R160C6ATMA1TR-ND IPB60R160C6ATMA1 IPB60R160C6ATMA1 IPB60R160C6ATMA1 30T1829
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R160C6ATMA1 600V 23.8A MOSFET Transistor Single FETs, MOSFETs MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet,n Ch,600V,23.8A,to263; Transistor Polarity Infineon
Package Type SOT3 Tape & Reel (TR) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 1660 pF @ 100 V TO-3
Polarity N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 600 volts 600 volts
PD 176 milliwatts 176000 milliwatts
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