N-Channel 600V 30A (Tc) 219W (Tc) Surface Mount PG-TO263-3
N-Channel 600V 30A (Tc) 219W (Tc) Surface Mount PG-TO263-3
N-Channel 600V 30A (Tc) 219W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 600V 30A D2PAK
MOSFET,N CH,600V,30A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB60R125C6ATMA1CT-ND | IPB60R125C6ATMA1 | 30T1828 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet,n Ch,600V,30A,to263; Transistor Polarity Infineon |
| Polarity | N-Channel |
