Infineon Technologies AG Single FETs, MOSFETs IPB60R120C7ATMA1

The Infineon 600V CoolMOS,Ñ¢ C7 Power Transistor (part number IPB60R120C7) is an N-channel MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) rating of 19A, making it suitable for demanding power management tasks. The device has a low on-resistance (RDS(on)) of 0.103 ohms, which contributes to improved efficiency in power conversion applications. This MOSFET is qualified for industrial-grade applications according to JEDEC standards and is capable of handling high switching frequencies without significant efficiency loss due to its low gate charge (Qg) of 34nC and low output capacitance (Eoss) of 4µJ at 400V. It is designed for both hard and soft switching applications, including power factor correction (PFC) and high-performance LLC converters, making it versatile for use in computing, telecom, and solar power systems. The package type is TO-263, which allows for compact designs and efficient thermal management. Overall, this MOSFET is a reliable choice for engineers looking for a high-performance component in their power management solutions.