Infineon Technologies AG Single FETs, MOSFETs IPB10N03LB

Description
N-Channel 30V 50A (Tc) 58W (Tc) Surface Mount PG-TO263-3
Request a Quote Datasheet
Description
N-Channel 30V 50A (Tc) 58W (Tc) Surface Mount PG-TO263-3
Request a Quote Datasheet

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Single FETs, MOSFETs - IPB10N03LB-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB10N03LB-ND
Single FETs, MOSFETs IPB10N03LB-ND
N-Channel 30V 50A (Tc) 58W (Tc) Surface Mount PG-TO263-3

N-Channel 30V 50A (Tc) 58W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB10N03LB - 117247-IPB10N03LB - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB10N03LB
117247-IPB10N03LB
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB10N03LB 117247-IPB10N03LB
Manufacturer: Infineon Technologies Win Source Part Number: 117247-IPB10N03LB Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 58W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3 Dimension: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 20μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 1639pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.6 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 117247-IPB10N03LB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 58W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3
Dimension: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 20μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 1639pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.6 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB10N03LB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB10N03LB
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB10N03LB
MOSFET N-CH 30V 50A TO263-3

MOSFET N-CH 30V 50A TO263-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPB10N03LB-ND 117247-IPB10N03LB IPB10N03LB
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB10N03LB Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; PG-TO263-3 13 nC @ 5 V
V(BR)DSS 30 volts
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