Infineon Technologies AG 100V 95A MOSFET Transistor IPB08CN10NG

Description
MOSFET N-CH 100V 95A TO263-3 Product overview: IPB08CN10NG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 95A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 95A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPB08CN10NG can be used for catalog matching and distributor lookup.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB08CN10NG - 068968-IPB08CN10NG - Win Source Electronics
    Win Source Electronics
  • Power Field-Effect Transistor, 95A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 - 9152-IPB08CN10NG - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
MOSFET N-CH 100V 95A TO263-3 Product overview: IPB08CN10NG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 95A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 95A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPB08CN10NG can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
100V 95A MOSFET Transistor
285-IPB08CN10NG
100V 95A MOSFET Transistor 285-IPB08CN10NG
MOSFET N-CH 100V 95A TO263-3 Product overview: IPB08CN10NG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 95A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 95A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPB08CN10NG can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 95A TO263-3 Product overview: IPB08CN10NG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 95A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 95A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPB08CN10NG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB08CN10NG - 068968-IPB08CN10NG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB08CN10NG
068968-IPB08CN10NG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB08CN10NG 068968-IPB08CN10NG
Manufacturer: Infineon Technologies Win Source Part Number: 068968-IPB08CN10NG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 167W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 95A (Tc) Gate-Source Threshold Voltage: 4V @ 130μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 6660pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 95A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 068968-IPB08CN10NG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 95A (Tc)
Gate-Source Threshold Voltage: 4V @ 130μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 6660pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 95A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Power Field-Effect Transistor, 95A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 - 9152-IPB08CN10NG - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 95A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
9152-IPB08CN10NG
Power Field-Effect Transistor, 95A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 9152-IPB08CN10NG
Power Field-Effect Transistor, 95A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Power Field-Effect Transistor, 95A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 285-IPB08CN10NG 068968-IPB08CN10NG 9152-IPB08CN10NG
Product Name 100V 95A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB08CN10NG Power Field-Effect Transistor, 95A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 167000 milliwatts 167000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data