IKFW60N60DH3E is a 600 V, 50 A third-generation TRENCHSTOP IGBT with a fast and soft antiparallel diode in a fully isolated TO-247-3-AI package. It has a collector-emitter saturation voltage of 2.2 V at 25°C and 50 A, a maximum junction temperature of 175°C, and a short-circuit withstand time of 5 µs at 175°C. The device features 2500 V RMS electrical isolation at 50/60 Hz for 1 minute and a thermal resistance from junction to heatsink of 0.90 to 1.06 K/W for the IGBT and 1.75 to 1.96 K/W for the diode. The isolation mounting surface is 100 % tested.
600 V, 50 A IGBT with anti-parallel diode in TO-247
High speed switching 600 V, 50 A third generation TRENCHSTOP™ IGBT copacked with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution.
Summary of Features
Benefits
Applications
TO-247-3-AI IGBT Transistors / Modules ROHS
| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors |
| Product Number | IKFW60N60DH3E | IKFW60N60DH3E |
| Product Name | IGBT Discretes | Transistors |
| VCE(on) | 600 volts | |
| Switching Speed | 10 to 44 kHz | |
| tr | 39 ns |