Infineon Technologies AG IGBT Discretes IKFW60N60DH3E

Description
600 V, 50 A IGBT with anti-parallel diode in TO-247 High speed switching 600 V, 50 A third generation TRENCHSTOP™ IGBT copacked with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution. Summary of Features Short circuit withstand time 5μs at Tvj = 175°C Positive temperature coefficient in VCEsat Low EMI Very soft, fast recovery anti-parallel diode Maximum junction temperature 175°C 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min 100 % tested isolated mounting surface Pb-free lead plating; RoHS compliant Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Benefits No need to use isolation material and thermal grease 35% reduction in assembling time compared to standard TO-247 with Iso-foils Increased yield eliminating misalignments of isolation foils Up to 10°C lower Tc compared to standard TO-247 with isolation material Up to 20% Iout increase for higher power output Complete manufacturing process control Easy paralleling Applications Residential air conditioning: Smart (IoT) and efficient cooling
Request a Quote
Description
600 V, 50 A IGBT with anti-parallel diode in TO-247 High speed switching 600 V, 50 A third generation TRENCHSTOP™ IGBT copacked with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution. Summary of Features Short circuit withstand time 5μs at Tvj = 175°C Positive temperature coefficient in VCEsat Low EMI Very soft, fast recovery anti-parallel diode Maximum junction temperature 175°C 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min 100 % tested isolated mounting surface Pb-free lead plating; RoHS compliant Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Benefits No need to use isolation material and thermal grease 35% reduction in assembling time compared to standard TO-247 with Iso-foils Increased yield eliminating misalignments of isolation foils Up to 10°C lower Tc compared to standard TO-247 with isolation material Up to 20% Iout increase for higher power output Complete manufacturing process control Easy paralleling Applications Residential air conditioning: Smart (IoT) and efficient cooling
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

IKFW60N60DH3E is a 600 V, 50 A third-generation TRENCHSTOP IGBT with a fast and soft antiparallel diode in a fully isolated TO-247-3-AI package. It has a collector-emitter saturation voltage of 2.2 V at 25°C and 50 A, a maximum junction temperature of 175°C, and a short-circuit withstand time of 5 µs at 175°C. The device features 2500 V RMS electrical isolation at 50/60 Hz for 1 minute and a thermal resistance from junction to heatsink of 0.90 to 1.06 K/W for the IGBT and 1.75 to 1.96 K/W for the diode. The isolation mounting surface is 100 % tested.

Datasheet Summary
Powered by GS/AI

IKFW60N60DH3E is a 600 V, 50 A third-generation TRENCHSTOP IGBT with a fast and soft antiparallel diode in a fully isolated TO-247-3-AI package. It has a collector-emitter saturation voltage of 2.2 V at 25°C and 50 A, a maximum junction temperature of 175°C, and a short-circuit withstand time of 5 µs at 175°C. The device features 2500 V RMS electrical isolation at 50/60 Hz for 1 minute and a thermal resistance from junction to heatsink of 0.90 to 1.06 K/W for the IGBT and 1.75 to 1.96 K/W for the diode. The isolation mounting surface is 100 % tested.

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKFW60N60DH3E - Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKFW60N60DH3E
IGBT Discretes IKFW60N60DH3E
600 V, 50 A IGBT with anti-parallel diode in TO-247 High speed switching 600 V, 50 A third generation TRENCHSTOP™ IGBT copacked with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution. Summary of Features Short circuit withstand time 5μs at Tvj = 175°C Positive temperature coefficient in VCEsat Low EMI Very soft, fast recovery anti-parallel diode Maximum junction temperature 175°C 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min 100 % tested isolated mounting surface Pb-free lead plating; RoHS compliant Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Benefits No need to use isolation material and thermal grease 35% reduction in assembling time compared to standard TO-247 with Iso-foils Increased yield eliminating misalignments of isolation foils Up to 10°C lower Tc compared to standard TO-247 with isolation material Up to 20% Iout increase for higher power output Complete manufacturing process control Easy paralleling Applications Residential air conditioning: Smart (IoT) and efficient cooling

600 V, 50 A IGBT with anti-parallel diode in TO-247

High speed switching 600 V, 50 A third generation TRENCHSTOP™ IGBT copacked with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution.


Summary of Features

  • Short circuit withstand time 5μs at Tvj = 175°C
  • Positive temperature coefficient in VCEsat
  • Low EMI
  • Very soft, fast recovery anti-parallel diode
  • Maximum junction temperature 175°C
  • 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
  • 100 % tested isolated mounting surface
  • Pb-free lead plating; RoHS compliant
  • Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

Benefits

  • No need to use isolation material and thermal grease
  • 35% reduction in assembling time compared to standard TO-247 with Iso-foils
  • Increased yield eliminating misalignments of isolation foils
  • Up to 10°C lower Tc compared to standard TO-247 with isolation material
  • Up to 20% Iout increase for higher power output
  • Complete manufacturing process control
  • Easy paralleling

Applications

  • Residential air conditioning: Smart (IoT) and efficient cooling
Supplier's Site Datasheet
Transistors IKFW60N60DH3E
TO-247-3-AI IGBT Transistors / Modules ROHS

TO-247-3-AI IGBT Transistors / Modules ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors
Product Number IKFW60N60DH3E IKFW60N60DH3E
Product Name IGBT Discretes Transistors
VCE(on) 600 volts
Switching Speed 10 to 44 kHz
tr 39 ns
Unlock Full Specs
to access all available technical data