Infineon Technologies AG IGBT Discretes IKFW50N65ES5

650 V, 50 A IGBT with anti-parallel diode in TO-247 package Hard-switching 650 V, 50 A TRENCHSTOP™ 5 S5 IGBT discrete in TO-247 advanced isolation package addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but easy design-in, faster time-to-market cycles and simplification of circuit design. This package eliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink. Summary of Features Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 S5 4 times Ic pulse current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min 100 % tested isolated mounting surface Pb-free lead plating; RoHS compliant Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Benefits No need to use isolation material and thermal grease 35% reduction in assembling time compared to standard TO-247 with Iso-foils Increased yield eliminating misalignments of isolation foils Up to 10°C lower Tc compared to standard TO-247 with isolation material Up to 20% Iout increase for higher power output Complete manufacturing process control Easy paralleling Applications EV charging Photovoltaic Uninterruptible power supplies (UPS)