Infineon Technologies AG IGBT Transistors IKD10N60RF

Description
IGBT Transistors IGBT PRODUCTS TrenchStop RC
Description
IGBT Transistors IGBT PRODUCTS TrenchStop RC
Datasheet
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IGBT with integrated diode for hard switching applications in a PG-TO252-3 package, rated for 600 V collector-emitter voltage and 10 A continuous collector current, with a maximum junction temperature of 175°C and a collector-emitter saturation voltage of 1.65 V at 10 A and 25°C. It meets RoHS standards and is not AEC-Q100 or AEC-Q101 qualified.

Datasheet Summary
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IGBT with integrated diode for hard switching applications in a PG-TO252-3 package, rated for 600 V collector-emitter voltage and 10 A continuous collector current, with a maximum junction temperature of 175°C and a collector-emitter saturation voltage of 1.65 V at 10 A and 25°C. It meets RoHS standards and is not AEC-Q100 or AEC-Q101 qualified.

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Sheung Wan, Hong Kong
IGBT Transistors
IKD10N60RF
IGBT Transistors IKD10N60RF
IGBT Transistors IGBT PRODUCTS TrenchStop RC

IGBT Transistors IGBT PRODUCTS TrenchStop RC

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IKD10N60RF
Product Name IGBT Transistors
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