The IKD04N60RC2 is a 600 V, 4 A monolithically integrated reverse-conducting IGBT with a diode, designed for hard-switching applications in industrial and home appliance drives. It is packaged in a PG-TO252-3 case with dimensions of 6.22 mm maximum length, 6.73 mm maximum width, and 10.48 mm maximum height. The device operates with a maximum junction temperature of 175°C, features a short-circuit capability of 3 µs, and has a collector-emitter saturation voltage of 2.0 V at 4 A and 25°C. It is RoHS compliant, meets JEDEC J-STD-020 solderability standards, and is qualified for industrial applications according to JEDEC JESD47/20/22. The device supports switching frequencies up to 20 kHz and has a gate-emitter voltage rating of ±20 V.
600 V, 4 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
RC Drives 2 600 V, 4 A IGBT Discrete in PG-TO252-3 package.
RC-D2 with the monolithically integrated diode offers improvements of the performance, controllability and reliability compared to the RC-DF.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IKD04N60RC2 |
| Product Name | IGBT Discretes |
| VCE(on) | 600 volts |
| Switching Speed | 4 to 20 kHz |
| tr | 9 ns |
| tf | 41 ns |
