Infineon Technologies AG IGBT Discretes IKB40N65ES5

Description
650 V, 40 A IGBT with anti-parallel diode in TO-263 package Hard-switching 650 V, 40 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5 ICn=four times nominal current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj = 175°C Qualified according to JEDEC standards Benefits VCE(peak) clamping circuits not required Suitable for use with single turn-on / turn-off gate resistor No need for gate clamping components Gate drivers with Miller clamping not required Reduction in the EMI filtering needed Excellent for paralleling Applications Energy Storage Systems Uninterruptible power supplies (UPS)
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Description
650 V, 40 A IGBT with anti-parallel diode in TO-263 package Hard-switching 650 V, 40 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5 ICn=four times nominal current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj = 175°C Qualified according to JEDEC standards Benefits VCE(peak) clamping circuits not required Suitable for use with single turn-on / turn-off gate resistor No need for gate clamping components Gate drivers with Miller clamping not required Reduction in the EMI filtering needed Excellent for paralleling Applications Energy Storage Systems Uninterruptible power supplies (UPS)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKB40N65ES5 - Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKB40N65ES5
IGBT Discretes IKB40N65ES5
650 V, 40 A IGBT with anti-parallel diode in TO-263 package Hard-switching 650 V, 40 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5 ICn=four times nominal current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj = 175°C Qualified according to JEDEC standards Benefits VCE(peak) clamping circuits not required Suitable for use with single turn-on / turn-off gate resistor No need for gate clamping components Gate drivers with Miller clamping not required Reduction in the EMI filtering needed Excellent for paralleling Applications Energy Storage Systems Uninterruptible power supplies (UPS)

650 V, 40 A IGBT with anti-parallel diode in TO-263 package

Hard-switching 650 V, 40 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.


Summary of Features

  • Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
  • ICn=four times nominal current (100°C Tc)
  • Soft current fall characteristics with no tail current
  • Symmetrical, low voltage overshoot
  • Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
  • Maximum junction temperature Tvj = 175°C
  • Qualified according to JEDEC standards

Benefits

  • VCE(peak) clamping circuits not required
  • Suitable for use with single turn-on / turn-off gate resistor
  • No need for gate clamping components
  • Gate drivers with Miller clamping not required
  • Reduction in the EMI filtering needed
  • Excellent for paralleling

Applications

  • Energy Storage Systems
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IKB40N65ES5
Product Name IGBT Discretes
VCE(on) 650 volts
Switching Speed 10 to 40 kHz
tr 18 ns
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