Infineon Technologies AG IGBT Discretes IKB40N65EF5

650 V, 40 A IGBT with anti-parallel diode in TO263 package Hard-switching 650 V, 40 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full rated current Rapid 1 fast and soft anti parallel diode, redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. This family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. Summary of Features 650 V breakthrough voltage Compared to Infineon’s best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200 mV reduction in VCEsat Co-packed with Infineon’s new Rapid Si-diode technology Low COES /EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Applications Automotive secondary power distribution unit EV charging Photovoltaic Power conversion