Infineon Technologies AG Power - IGBT - IGBT Discretes - IKB30N65ES5 IKB30N65ES5

650 V, 30 A IGBT with anti-parallel diode in TO-263 package Hard-switching 650 V, 30 A TRENCHSTOP™ 5 high speed IGBT in D2Pak (TO263) package copacked with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.35 V at 25 °C, 20 % lower than TRENCHSTOP™ 5 H5 ICn=four times nominal current (100 °C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj=175 °C Qualified according to JEDEC standards Benefits VCE(peak) clamping circuits not required Suitable for use with single turn-on / turn-off gate resistor No need for gate clamping components Gate drivers with Miller clamping not required Reduction in the EMI filtering needed Excellent for paralleling Applications Energy Storage Systems Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with 2ED2184S06F | Gate driver ICs 2EDR6258X | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDR6258X | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDR6258X | Gate driver ICs