Infineon Technologies AG IGBT Discretes IKB20N60H3

Description
600 V IGBT with anti-parallel diode in TO263 package High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO263 D2PAK package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Summary of Features Low switching losses for high efficiency Excellent VCE(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Optimized diode for target applications, meaning further improvement in switching losses Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour Short circuit capability 5µs Offering Tvj(max) of 175°C Packaged with and without freewheeling diode for increased design freedom Benefits Low switching and conduction losses Very good EMI behavior Can be used with a small gate resistor for reduced delay time and voltage overshoot High current density Best-in-class 600 V IGBT efficiency and EMI behavior Potential Applications Industrial heating and welding Solutions for solar energy systems Uninterruptible power supply (UPS) Applications Central inverter solutions
  • IGBT Discretes - IKB20N60H3 - Infineon Technologies AG
    Infineon Technologies AG
  • IGBTs - Single - IKB20N60H3 - 1185350-IKB20N60H3 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
600 V IGBT with anti-parallel diode in TO263 package High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO263 D2PAK package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Summary of Features Low switching losses for high efficiency Excellent VCE(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Optimized diode for target applications, meaning further improvement in switching losses Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour Short circuit capability 5µs Offering Tvj(max) of 175°C Packaged with and without freewheeling diode for increased design freedom Benefits Low switching and conduction losses Very good EMI behavior Can be used with a small gate resistor for reduced delay time and voltage overshoot High current density Best-in-class 600 V IGBT efficiency and EMI behavior Potential Applications Industrial heating and welding Solutions for solar energy systems Uninterruptible power supply (UPS) Applications Central inverter solutions
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKB20N60H3 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKB20N60H3
IGBT Discretes IKB20N60H3
600 V IGBT with anti-parallel diode in TO263 package High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO263 D2PAK package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Summary of Features Low switching losses for high efficiency Excellent VCE(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Optimized diode for target applications, meaning further improvement in switching losses Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour Short circuit capability 5µs Offering Tvj(max) of 175°C Packaged with and without freewheeling diode for increased design freedom Benefits Low switching and conduction losses Very good EMI behavior Can be used with a small gate resistor for reduced delay time and voltage overshoot High current density Best-in-class 600 V IGBT efficiency and EMI behavior Potential Applications Industrial heating and welding Solutions for solar energy systems Uninterruptible power supply (UPS) Applications Central inverter solutions

600 V IGBT with anti-parallel diode in TO263 package

High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO263 D2PAK package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.


Summary of Features

  • Low switching losses for high efficiency
  • Excellent VCE(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability 5µs
  • Offering Tvj(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom

Benefits

  • Low switching and conduction losses
  • Very good EMI behavior
  • Can be used with a small gate resistor for reduced delay time and voltage overshoot
  • High current density
  • Best-in-class 600 V IGBT efficiency and EMI behavior

Potential Applications

  • Industrial heating and welding
  • Solutions for solar energy systems
  • Uninterruptible power supply (UPS)

Applications

  • Central inverter solutions
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
600v IGBT Transistor
279-IKB20N60H3
600v IGBT Transistor 279-IKB20N60H3
IGBTs 600v Hi-Speed SW IGBT Product overview: IKB20N60H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600v. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600v. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKB20N60H3 can be used for catalog matching and distributor lookup.

IGBTs 600v Hi-Speed SW IGBT Product overview: IKB20N60H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600v. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600v. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKB20N60H3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - IKB20N60H3 - 1185350-IKB20N60H3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IKB20N60H3
1185350-IKB20N60H3
IGBTs - Single - IKB20N60H3 1185350-IKB20N60H3
Manufacturer: Infineon Technologies Win Source Part Number: 1185350-IKB20N60H3 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1185350-IKB20N60H3
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IKB20N60H3
IGBT Transistors IKB20N60H3
IGBT Transistors 600v Hi-Speed SW IGBT

IGBT Transistors 600v Hi-Speed SW IGBT

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IKB20N60H3 279-IKB20N60H3 1185350-IKB20N60H3 IKB20N60H3
Product Name IGBT Discretes 600v IGBT Transistor IGBTs - Single - IKB20N60H3 IGBT Transistors
VCE(on) 600 volts
Switching Speed 20 to 100 kHz
tr 20 ns
tf 11 ns
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