Infineon Technologies AG IGBTs - Single - IKB03N120H2 IKB03N120H2

Manufacturer: Infineon Technologies
Win Source Part Number: 068785-IKB03N120H2
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 42ns
Input Type: Standard
Gate Charge: 22nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO263-3-2
Maximum Current Collector: 9.6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 62.5W
Pulsed Collector Current: 9.9A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 3A
Total Switching Energy(Ets): 290μJ
Turn-on and Turn-off delay time: 9.2ns/281ns
Testing Conditions: 800V, 3A, 82 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

IGBT 1200V 9.6A 62.5W TO220-3 Product overview: IKB03N120H2 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 9.6A, 62.5W, TO220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 9.6A, 62.5W, TO220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKB03N120H2 can be used for catalog matching and distributor lookup.