Manufacturer: Infineon Technologies
Win Source Part Number: 068785-IKB03N120H2
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 42ns
Input Type: Standard
Gate Charge: 22nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO263-3-2
Maximum Current Collector: 9.6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 62.5W
Pulsed Collector Current: 9.9A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 3A
Total Switching Energy(Ets): 290μJ
Turn-on and Turn-off delay time: 9.2ns/281ns
Testing Conditions: 800V, 3A, 82 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 068785-IKB03N120H2 | IKB03N120H2 |
| Product Name | IGBTs - Single - IKB03N120H2 | IGBT Transistors |
| VCE(on) | 2.8 volts |
