Infineon Technologies AG IGBT Discretes IKA08N65H5

Description
650 V, 8 A IGBT with anti-parallel diode in TO-220 package High Speed 650 V, 8 A hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-220 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Potential Applications Uninterruptible power supply (UPS) Industrial heating and welding
  • IGBT Discretes - IKA08N65H5 - Infineon Technologies AG
    Infineon Technologies AG
  • Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1382299-IKA08N65H5 - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - IKA08N65H5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
650 V, 8 A IGBT with anti-parallel diode in TO-220 package High Speed 650 V, 8 A hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-220 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Potential Applications Uninterruptible power supply (UPS) Industrial heating and welding
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKA08N65H5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKA08N65H5
IGBT Discretes IKA08N65H5
650 V, 8 A IGBT with anti-parallel diode in TO-220 package High Speed 650 V, 8 A hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-220 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Potential Applications Uninterruptible power supply (UPS) Industrial heating and welding

650 V, 8 A IGBT with anti-parallel diode in TO-220 package

High Speed 650 V, 8 A hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-220 package, is defined as "best-in-class" IGBT.


Summary of Features

  • 650 V breakthrough voltage
  • Compared to best-in-class HighSpeed 3 family
  • Factor 2.5 lower Qg
  • Factor 2 reduction in switching losses
  • 200mV reduction in VCEsat
  • Co-packed with Rapid Si-diode technology
  • Low COES/EOSS
  • Mild positive temperature coefficient VCEsat
  • Temperature stability of Vf

Benefits

  • best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
  • 50 V increase in the bus voltage possible without compromising reliability
  • Higher power density design

Potential Applications

  • Uninterruptible power supply (UPS)
  • Industrial heating and welding
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1382299-IKA08N65H5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1382299-IKA08N65H5
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1382299-IKA08N65H5
Win Source Part Number: 1382299-IKA08N65H5 Category: Discrete Semiconductor Products>Transistors >IGBTs>Single IGBTs Series: TRENCHSTOP™ Package: Bulk Power - Max: 31.2 W Reverse Recovery Time (trr): 40 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 10.8 A Current - Collector Pulsed (Icm): 24 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Switching Energy: 70µJ (on), 30µJ (off) Input Type: Standard Gate Charge: 22 nC Td (on/off) @ 25°C: 11ns/115ns Test Condition: 400V, 4A, 48Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-3-111 Temperature Range - Operating: -40°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. HTSUS: 8542.39.0001 Mfr: Infineon Technologies Standard Package: 1 pcs

Win Source Part Number: 1382299-IKA08N65H5
Category: Discrete Semiconductor Products>Transistors>IGBTs>Single IGBTs
Series: TRENCHSTOP™
Package: Bulk
Power - Max: 31.2 W
Reverse Recovery Time (trr): 40 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10.8 A
Current - Collector Pulsed (Icm): 24 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Switching Energy: 70µJ (on), 30µJ (off)
Input Type: Standard
Gate Charge: 22 nC
Td (on/off) @ 25°C: 11ns/115ns
Test Condition: 400V, 4A, 48Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3-111
Temperature Range - Operating: -40°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
HTSUS: 8542.39.0001
Mfr: Infineon Technologies
Standard Package: 1 pcs

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
IGBT Transistor
279-IKA08N65H5
IGBT Transistor 279-IKA08N65H5
IGBTs IGBT PRODUCTS Product overview: IKA08N65H5 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKA08N65H5 can be used for catalog matching and distributor lookup.

IGBTs IGBT PRODUCTS Product overview: IKA08N65H5 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKA08N65H5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - IKA08N65H5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IKA08N65H5
Single IGBTs IKA08N65H5
IKA08N65 - DISCRETE IGBT WITH AN

IKA08N65 - DISCRETE IGBT WITH AN

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IKA08N65H5
IGBT Transistors IKA08N65H5
IGBT Transistors IGBT PRODUCTS

IGBT Transistors IGBT PRODUCTS

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IKA08N65H5 1382299-IKA08N65H5 279-IKA08N65H5 IKA08N65H5 IKA08N65H5
Product Name IGBT Discretes Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs IGBT Transistor Single IGBTs IGBT Transistors
VCE(on) 650 volts
Switching Speed 30 to 100 kHz
tr 5 ns
tf 15 ns
Package Type TO-220; PG-TO220-3 SOT3 Tube TO-220; TO-220-3 Full Pack
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