Infineon Technologies AG Power - IGBT - IGBT Discretes - IKA08N65F5 IKA08N65F5

Description
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Applications Photovoltaic Uninterruptible power supplies (UPS)
  • Power - IGBT - IGBT Discretes - IKA08N65F5 - IKA08N65F5 - Infineon Technologies AG
    Infineon Technologies AG
  • Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1376586-IKA08N65F5 - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - IKA08N65F5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Applications Photovoltaic Uninterruptible power supplies (UPS)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - IGBT Discretes - IKA08N65F5 - IKA08N65F5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Discretes - IKA08N65F5
IKA08N65F5
Power - IGBT - IGBT Discretes - IKA08N65F5 IKA08N65F5
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Applications Photovoltaic Uninterruptible power supplies (UPS)

High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT.


Summary of Features

  • 650 V breakthrough voltage
  • Compared to best-in-class HighSpeed 3 family
  • Factor 2.5 lower Qg
  • Factor 2 reduction in switching losses
  • 200mV reduction in VCEsat
  • Co-packed with Rapid Si-diode technology
  • Low COES/EOSS
  • Mild positive temperature coefficient VCEsat
  • Temperature stability of Vf

Benefits

  • Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
  • 50 V increase in the bus voltage possible without compromising reliability
  • Higher power density design

Applications

  • Photovoltaic
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1376586-IKA08N65F5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1376586-IKA08N65F5
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1376586-IKA08N65F5
Win Source Part Number: 1376586-IKA08N65F5 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Temperature Range - Operating: -40°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 47 pct. Mfr: Infineon Technologies Series: TRENCHSTOP™ Package: Bulk Product Status: Active Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1 Mounting Type: Through Hole HTSUS: 8542.39.0001 Test Condition: 400V, 4A, 48Ohm, 15V Reverse Recovery Time (trr): 41 ns Current - Collector (Ic) (Max): 10.8 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 31.2 W Input Type: Standard IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 24 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Switching Energy: 70µJ (on), 20µJ (off) Gate Charge: 22 nC Td (on/off) @ 25°C: 10ns/116ns

Win Source Part Number: 1376586-IKA08N65F5
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -40°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
Mfr: Infineon Technologies
Series: TRENCHSTOP™
Package: Bulk
Product Status: Active
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
HTSUS: 8542.39.0001
Test Condition: 400V, 4A, 48Ohm, 15V
Reverse Recovery Time (trr): 41 ns
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 31.2 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 24 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Switching Energy: 70µJ (on), 20µJ (off)
Gate Charge: 22 nC
Td (on/off) @ 25°C: 10ns/116ns

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
IGBT Transistor
279-IKA08N65F5
IGBT Transistor 279-IKA08N65F5
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT Product overview: IKA08N65F5 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKA08N65F5 can be used for catalog matching and distributor lookup.

IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT Product overview: IKA08N65F5 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKA08N65F5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IKA08N65F5
IGBT Transistors IKA08N65F5
IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

Buy Now Datasheet
Single IGBTs - IKA08N65F5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IKA08N65F5
Single IGBTs IKA08N65F5
IKA08N65 - DISCRETE IGBT WITH AN

IKA08N65 - DISCRETE IGBT WITH AN

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IKA08N65F5 1376586-IKA08N65F5 279-IKA08N65F5 IKA08N65F5 IKA08N65F5
Product Name Power - IGBT - IGBT Discretes - IKA08N65F5 Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs IGBT Transistor IGBT Transistors Single IGBTs
VCE(on) 650 volts
Switching Speed 60 to 120 kHz
tr 5 ns
tf 20 ns
Package Type TO-220; PG-TO220-3 SOT3 Tube TO-220; TO-220-3
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