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Infineon Technologies AG IGBT Discretes IKA08N65ET6

Description
650 V, 8 A IGBT with anti-parallel diode in TO-220 FullPAK package Hard-switching 650 V, 8 A TRENCHSTOP™ IGBT6 discrete in TO-220 FullPAK package with soft, fast recovery anti-parallel diode. Summary of Features Lowest VCE(sat) and Vf 650 V blocking voltage 3 μsec short-circuit protection capability Optimized for switching frequencies from 8–30 kHz Maximum junction temperature 175°C Short circuit withstand time 3 μs Low gate charge QG Benefits Good thermal performance, especially at higher frequencies Low losses to meet energy efficiency requirements Increased design margin and reliability Leading price/performance Applications Motor control and drives Residential air conditioning: Smart and efficient cooling
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Suppliers

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IGBT Discretes - IKA08N65ET6 - Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKA08N65ET6
IGBT Discretes IKA08N65ET6
650 V, 8 A IGBT with anti-parallel diode in TO-220 FullPAK package Hard-switching 650 V, 8 A TRENCHSTOP™ IGBT6 discrete in TO-220 FullPAK package with soft, fast recovery anti-parallel diode. Summary of Features Lowest VCE(sat) and Vf 650 V blocking voltage 3 μsec short-circuit protection capability Optimized for switching frequencies from 8–30 kHz Maximum junction temperature 175°C Short circuit withstand time 3 μs Low gate charge QG Benefits Good thermal performance, especially at higher frequencies Low losses to meet energy efficiency requirements Increased design margin and reliability Leading price/performance Applications Motor control and drives Residential air conditioning: Smart and efficient cooling

650 V, 8 A IGBT with anti-parallel diode in TO-220 FullPAK package

Hard-switching 650 V, 8 A TRENCHSTOP™ IGBT6 discrete in TO-220 FullPAK package with soft, fast recovery anti-parallel diode.


Summary of Features

  • Lowest VCE(sat) and Vf
  • 650 V blocking voltage
  • 3 μsec short-circuit protection capability
  • Optimized for switching frequencies from 8–30 kHz
  • Maximum junction temperature 175°C
  • Short circuit withstand time 3 μs
  • Low gate charge QG

Benefits

  • Good thermal performance, especially at higher frequencies
  • Low losses to meet energy efficiency requirements
  • Increased design margin and reliability
  • Leading price/performance

Applications

  • Motor control and drives
  • Residential air conditioning: Smart and efficient cooling
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IKA08N65ET6
Product Name IGBT Discretes
VCE(on) 650 volts
Switching Speed 5 to 30 kHz
tr 12 ns
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