Infineon Technologies AG IGBT Discretes IHW50N65R5

650 V, 50 A IGBT Discretes with anti-parallel diode in TO-247 package The Reverse Conducting R5 650 V, 50 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications. With a monolithically integrated diode, the 650 V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens. The RC-H5 IGBT complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. Summary of Features Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation 650 V blocking voltage Hard switching capable Benefits Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability 50 V higher voltage possible for increased reliability Performs well in designs with higher switching frequencies up to 40 kHz Applications Microwave ovens Smart induction cooktop – precise and efficient heating control Designers who used this product also designed with 2ED21824S06J | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant 2ED21824S06J | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant 2ED21824S06J | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant