Infineon Technologies AG 1200V 50A 365W IGBT Transistor IHW25N120R2

IGBT 1200V 50A 365W TO247-3 Product overview: IHW25N120R2 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A, 365W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A, 365W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IHW25N120R2 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 068781-IHW25N120R2
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 60.7nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 365W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 25A
Total Switching Energy(Ets): 1.59mJ
Turn-on and Turn-off delay time: -/324ns
Testing Conditions: 600V, 25A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited