Infineon Technologies AG IGBTs - Single - IHW20N120R3 IHW20N120R3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 068779-IHW20N120R3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Input Type: Standard Gate Charge: 211nC Family Name: IHW20N120R3 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 310W Pulsed Collector Current: 60A Collector-emitter saturation voltage(Max): 1.7V @ 15V, 20A Total Switching Energy(Ets): 950μJ (off) Turn-on and Turn-off delay time: -/387ns Testing Conditions: 600V, 20A, 15 Ohm, 15V Alternative Parts (Cross-Reference): STGW15S120DF3; IXYH20N120C3; RJH1CF4RDPQ-80#T2; Introduction Date: April 01, 2009 ECCN: EAR99 Country of Origin: China Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 068779-IHW20N120R3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Input Type: Standard Gate Charge: 211nC Family Name: IHW20N120R3 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 310W Pulsed Collector Current: 60A Collector-emitter saturation voltage(Max): 1.7V @ 15V, 20A Total Switching Energy(Ets): 950μJ (off) Turn-on and Turn-off delay time: -/387ns Testing Conditions: 600V, 20A, 15 Ohm, 15V Alternative Parts (Cross-Reference): STGW15S120DF3; IXYH20N120C3; RJH1CF4RDPQ-80#T2; Introduction Date: April 01, 2009 ECCN: EAR99 Country of Origin: China Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - IHW20N120R3 - 068779-IHW20N120R3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IHW20N120R3
068779-IHW20N120R3
IGBTs - Single - IHW20N120R3 068779-IHW20N120R3
Manufacturer: Infineon Technologies Win Source Part Number: 068779-IHW20N120R3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Input Type: Standard Gate Charge: 211nC Family Name: IHW20N120R3 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 310W Pulsed Collector Current: 60A Collector-emitter saturation voltage(Max): 1.7V @ 15V, 20A Total Switching Energy(Ets): 950μJ (off) Turn-on and Turn-off delay time: -/387ns Testing Conditions: 600V, 20A, 15 Ohm, 15V Alternative Parts (Cross-Reference): STGW15S120DF3; IXYH20N120C3; RJH1CF4RDPQ-80#T2; Introduction Date: April 01, 2009 ECCN: EAR99 Country of Origin: China Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 068779-IHW20N120R3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench
Input Type: Standard
Gate Charge: 211nC
Family Name: IHW20N120R3
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 310W
Pulsed Collector Current: 60A
Collector-emitter saturation voltage(Max): 1.7V @ 15V, 20A
Total Switching Energy(Ets): 950μJ (off)
Turn-on and Turn-off delay time: -/387ns
Testing Conditions: 600V, 20A, 15 Ohm, 15V
Alternative Parts (Cross-Reference): STGW15S120DF3; IXYH20N120C3; RJH1CF4RDPQ-80#T2;
Introduction Date: April 01, 2009
ECCN: EAR99
Country of Origin: China
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
1200V 40A 310W IGBT Transistor
279-IHW20N120R3
1200V 40A 310W IGBT Transistor 279-IHW20N120R3
IGBT 1200V 40A 310W TO247-3 Product overview: IHW20N120R3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 40A, 310W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 40A, 310W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IHW20N120R3 can be used for catalog matching and distributor lookup.

IGBT 1200V 40A 310W TO247-3 Product overview: IHW20N120R3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 40A, 310W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 40A, 310W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IHW20N120R3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
IHW20N120R3
IGBT Transistors IHW20N120R3
IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body

IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 068779-IHW20N120R3 279-IHW20N120R3 IHW20N120R3
Product Name IGBTs - Single - IHW20N120R3 1200V 40A 310W IGBT Transistor IGBT Transistors
VCE(on) 1.7 volts
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