Infineon Technologies AG Single IGBTs IHW15N120R2

Description
IGBT Trench Field Stop 1200V 30A 357W Through Hole PG-TO247-3-1
Request a Quote Datasheet
Description
IGBT Trench Field Stop 1200V 30A 357W Through Hole PG-TO247-3-1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IHW15N120R2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IHW15N120R2-ND
Single IGBTs IHW15N120R2-ND
IGBT Trench Field Stop 1200V 30A 357W Through Hole PG-TO247-3-1

IGBT Trench Field Stop 1200V 30A 357W Through Hole PG-TO247-3-1

Buy Now Datasheet
IGBTs - Single - IHW15N120R2 - 1045246-IHW15N120R2 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IHW15N120R2
1045246-IHW15N120R2
IGBTs - Single - IHW15N120R2 1045246-IHW15N120R2
Manufacturer: Infineon Technologies Win Source Part Number: 1045246-IHW15N120R2 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 133nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 357W Pulsed Collector Current: 45A Collector-emitter saturation voltage(Max): 1.75V @ 15V, 15A Total Switching Energy(Ets): 900μJ (off) Turn-on and Turn-off delay time: -/282ns Testing Conditions: 600V, 15A, 14.8 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1045246-IHW15N120R2
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 133nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 357W
Pulsed Collector Current: 45A
Collector-emitter saturation voltage(Max): 1.75V @ 15V, 15A
Total Switching Energy(Ets): 900μJ (off)
Turn-on and Turn-off delay time: -/282ns
Testing Conditions: 600V, 15A, 14.8 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
1200V 30A 357W IGBT Transistor
279-IHW15N120R2
1200V 30A 357W IGBT Transistor 279-IHW15N120R2
IGBT 1200V 30A 357W TO247-3 Product overview: IHW15N120R2 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A, 357W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 30A, 357W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IHW15N120R2 can be used for catalog matching and distributor lookup.

IGBT 1200V 30A 357W TO247-3 Product overview: IHW15N120R2 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A, 357W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 30A, 357W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IHW15N120R2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IHW15N120R2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IHW15N120R2
Discrete Semiconductor Products - Transistors - IGBTs IHW15N120R2
IGBT 1200V 30A 357W TO247-3

IGBT 1200V 30A 357W TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IHW15N120R2-ND 1045246-IHW15N120R2 279-IHW15N120R2 IHW15N120R2
Product Name Single IGBTs IGBTs - Single - IHW15N120R2 1200V 30A 357W IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
Package Type TO-247; TO-247-3 SOT3; PG-TO247-3 Tube
Packing Method Tube Rail; Tube; Tube/Rail Tube Tube; Tube
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