IGBT Trench Field Stop 1200V 30A 357W Through Hole PG-TO247-3-1
Manufacturer: Infineon Technologies
Win Source Part Number: 1045246-IHW15N120R2
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 133nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 357W
Pulsed Collector Current: 45A
Collector-emitter saturation voltage(Max): 1.75V @ 15V, 15A
Total Switching Energy(Ets): 900μJ (off)
Turn-on and Turn-off delay time: -/282ns
Testing Conditions: 600V, 15A, 14.8 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
IGBT 1200V 30A 357W TO247-3 Product overview: IHW15N120R2 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A, 357W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 30A, 357W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IHW15N120R2 can be used for catalog matching and distributor lookup.
IGBT 1200V 30A 357W TO247-3
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IHW15N120R2-ND | 1045246-IHW15N120R2 | 279-IHW15N120R2 | IHW15N120R2 |
| Product Name | Single IGBTs | IGBTs - Single - IHW15N120R2 | 1200V 30A 357W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
| Package Type | TO-247; TO-247-3 | SOT3; PG-TO247-3 | Tube | |
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube |