The IGZ75N65H5 is a 650V high-speed IGBT in TRENCHSTOP™ 5 technology, designed for efficient switching in industrial power control applications such as uninterruptible power supplies, welding converters, and solar string inverters. It is packaged in a PG-TO247-4 case with a Kelvin emitter pin to reduce gate-emitter loop inductance and improve switching performance. The device has a continuous collector current rating of 75A, a collector-emitter saturation voltage of 1.65V at 75A and 25°C, and a maximum junction temperature of 175°C. It is qualified according to JEDEC standards and is RoHS compliant with Pb-free lead plating.
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IGZ75N65H5 |
| Product Name | IGBT Discretes |
| VCE(on) | 650 volts |
| Switching Speed | 30 to 100 kHz |
| tr | 11 ns |
