Infineon Technologies AG IGBT Discretes IGZ50N65H5

Description
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. Summary of Features Extremely low control inductance loop Emitter pin for driver feedback Same creepage distance of collector emitter as standard TO-247 package 20% reduction in total switching losses compared to TO-247 package using same technology Benefits System efficiency improvement compared to standard TO-247 Benefit increase at high current conditions IGBTs operates under lower junction temperature Much less power dissipation under overcurrent conditions Potential Applications Uninterruptible power supply Datacenters Telecom Rectifiers Photovoltaic Inverters Server
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Description
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. Summary of Features Extremely low control inductance loop Emitter pin for driver feedback Same creepage distance of collector emitter as standard TO-247 package 20% reduction in total switching losses compared to TO-247 package using same technology Benefits System efficiency improvement compared to standard TO-247 Benefit increase at high current conditions IGBTs operates under lower junction temperature Much less power dissipation under overcurrent conditions Potential Applications Uninterruptible power supply Datacenters Telecom Rectifiers Photovoltaic Inverters Server
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IGZ50N65H5 - Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IGZ50N65H5
IGBT Discretes IGZ50N65H5
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. Summary of Features Extremely low control inductance loop Emitter pin for driver feedback Same creepage distance of collector emitter as standard TO-247 package 20% reduction in total switching losses compared to TO-247 package using same technology Benefits System efficiency improvement compared to standard TO-247 Benefit increase at high current conditions IGBTs operates under lower junction temperature Much less power dissipation under overcurrent conditions Potential Applications Uninterruptible power supply Datacenters Telecom Rectifiers Photovoltaic Inverters Server

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.


Summary of Features

  • Extremely low control inductance loop
  • Emitter pin for driver feedback
  • Same creepage distance of collector emitter as standard TO-247 package
  • 20% reduction in total switching losses compared to TO-247 package using same technology

Benefits

  • System efficiency improvement compared to standard TO-247
  • Benefit increase at high current conditions
  • IGBTs operates under lower junction temperature
  • Much less power dissipation under overcurrent conditions

Potential Applications

  • Uninterruptible power supply
  • Datacenters
  • Telecom Rectifiers
  • Photovoltaic Inverters
  • Server
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IGZ50N65H5
Product Name IGBT Discretes
VCE(on) 650 volts
Switching Speed 30 to 100 kHz
tr 7 ns
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