Infineon Technologies AG IGBT Discretes IGW40N120H3

1200 V, 40 A IGBT Discrete in TO-247 package

1200 V, 40 A single HighSpeed 3 H3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features

• Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
• Low switching losses for high efficiency
• Excellent V_CEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
• Fast switching behavior with low EMI emissions
• Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
• Short circuit capability
• Offering T_j(max) of 175°C
• Packaged with and without freewheeling diode for increased design freedom

Benefits

• Low switching and conduction losses
• Very good EMI behavior
• Can be used with a small gate resistor for reduced delay time and voltage overshoot
• High current density
• Best-in-class 1200 V IGBT efficiency and EMI behavior

Applications

• DIN rail power supplies
• Photovoltaic
• Telecommunication infrastructure
• Uninterruptible power supplies (UPS)

Designers who used this product also designed with

• IKW30N65H5 |
  IGBT discretes
• IKW40N65ES5 |
  IGBT discretes
• IGW30N60H3 |
  IGBT discretes
• IGW20N60H3 |
  IGBT discretes
• IKP15N60T |
  IGBT discretes
• IKW30N65H5 |
  IGBT discretes
• IKW40N65ES5 |
  IGBT discretes
• IGW30N60H3 |
  IGBT discretes
• IGW20N60H3 |
  IGBT discretes
• IKP15N60T |
  IGBT discretes
• IKW30N65H5 |
  IGBT discretes
• IKW40N65ES5 |
  IGBT discretes
• IGW30N60H3 |
  IGBT discretes

1
2

IGBT Transistors IGBT PRODUCTS

IGBTs IGBT PRODUCTS Product overview: IGW40N120H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW40N120H3 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1045149-IGW40N120H3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 185nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 483W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 40A
Total Switching Energy(Ets): 3.16mJ
Turn-on and Turn-off delay time: 30ns/290ns
Testing Conditions: 600V, 40A, 12 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited