Infineon Technologies AG IGBT Discretes IGW30N60T

Description
600 V, 30 A IGBT Discrete in TO-247 package Hard-switching 600 V, 30 A TRENCHSTOP™ IGBT3 in TO-247 package for significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Motor Control Uninterruptible power supplies (UPS)
  • IGBT Discretes - IGW30N60T - Infineon Technologies AG
    Infineon Technologies AG
  • IGBTs - Single - IGW30N60T - 017142-IGW30N60T - Win Source Electronics
    Win Source Electronics
  • Transistors - IGW30N60T - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
600 V, 30 A IGBT Discrete in TO-247 package Hard-switching 600 V, 30 A TRENCHSTOP™ IGBT3 in TO-247 package for significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Motor Control Uninterruptible power supplies (UPS)
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Datasheet
Datasheet Summary
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The IGW30N60T is a 600 V, 30 A IGBT in a PG-TO247-3 package designed for frequency converters and uninterruptible power supplies. It features a collector-emitter saturation voltage of 1.5 V (typical) at 25°C, a maximum junction temperature of 175°C, and a short circuit withstand time of 5 µs. The device offers a positive temperature coefficient in V_CE(sat), low gate charge, low EMI, and is RoHS compliant. Thermal resistance from junction to case is 0.80 K/W. It meets JEDEC standards for target applications.

Datasheet Summary
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The IGW30N60T is a 600 V, 30 A IGBT in a PG-TO247-3 package designed for frequency converters and uninterruptible power supplies. It features a collector-emitter saturation voltage of 1.5 V (typical) at 25°C, a maximum junction temperature of 175°C, and a short circuit withstand time of 5 µs. The device offers a positive temperature coefficient in V_CE(sat), low gate charge, low EMI, and is RoHS compliant. Thermal resistance from junction to case is 0.80 K/W. It meets JEDEC standards for target applications.

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IGW30N60T - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IGW30N60T
IGBT Discretes IGW30N60T
600 V, 30 A IGBT Discrete in TO-247 package Hard-switching 600 V, 30 A TRENCHSTOP™ IGBT3 in TO-247 package for significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Motor Control Uninterruptible power supplies (UPS)

600 V, 30 A IGBT Discrete in TO-247 package

Hard-switching 600 V, 30 A TRENCHSTOP™ IGBT3 in TO-247 package for significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept.


Summary of Features

  • Lowest VCEsat drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability

Applications

  • Motor Control
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
600V 30A IGBT Transistor
279-IGW30N60T
600V 30A IGBT Transistor 279-IGW30N60T
IGBTs LOW LOSS IGBT TECH 600V 30A Product overview: IGW30N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 30A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 30A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW30N60T can be used for catalog matching and distributor lookup.

IGBTs LOW LOSS IGBT TECH 600V 30A Product overview: IGW30N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 30A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 30A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW30N60T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - IGW30N60T - 017142-IGW30N60T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IGW30N60T
017142-IGW30N60T
IGBTs - Single - IGW30N60T 017142-IGW30N60T
Manufacturer: Infineon Technologies Win Source Part Number: 017142-IGW30N60T Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 130nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 53A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 200W Pulsed Collector Current: 90A Collector-emitter saturation voltage(Max): 1.8V @ 15V, 30A Total Switching Energy(Ets): 710μJ (on), 420μJ (off) Turn-on and Turn-off delay time: 15ns/179ns Testing Conditions: 400V, 30A, 10.5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017142-IGW30N60T
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 130nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 53A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 30A
Total Switching Energy(Ets): 710μJ (on), 420μJ (off)
Turn-on and Turn-off delay time: 15ns/179ns
Testing Conditions: 400V, 30A, 10.5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistors - IGW30N60T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IGW30N60T
Transistors IGW30N60T
IGBT Transistors LOW LOSS IGBT TECH 600V 30A

IGBT Transistors LOW LOSS IGBT TECH 600V 30A

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IGW30N60T
IGBT Transistors IGW30N60T
IGBT Transistors LOW LOSS IGBT TECH 600V 30A

IGBT Transistors LOW LOSS IGBT TECH 600V 30A

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number IGW30N60T 279-IGW30N60T 017142-IGW30N60T IGW30N60T IGW30N60T
Product Name IGBT Discretes 600V 30A IGBT Transistor IGBTs - Single - IGW30N60T Transistors IGBT Transistors
VCE(on) 600 volts 1.8 volts
Switching Speed 2 to 20 kHz
tr 21 ns
tf 46 ns
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