Infineon Technologies AG 1000V 60A 412W IGBT Transistor IGW30N100TFKSA1

IGBT 1000V 60A 412W TO247-3 Product overview: IGW30N100TFKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 60A, 412W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1000V, 60A, 412W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW30N100TFKSA1 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1045147-IGW30N100TFKSA1
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 217nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 412W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 1.9V @ 15V, 30A
Total Switching Energy(Ets): 3.8mJ
Turn-on and Turn-off delay time: 33ns/535ns
Testing Conditions: 600V, 30A, 16 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

IGBT Trench Field Stop 1000V 60A 412W Through Hole PG-TO247-3