Infineon Technologies AG IGBTs - Single - IGW25T120 IGW25T120

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045146-IGW25T120 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT, Trench Field Stop Input Type: Standard Gate Charge: 155nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 190W Pulsed Collector Current: 75A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 25A Total Switching Energy(Ets): 4.2mJ Turn-on and Turn-off delay time: 50ns/560ns Testing Conditions: 600V, 25A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045146-IGW25T120 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT, Trench Field Stop Input Type: Standard Gate Charge: 155nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 190W Pulsed Collector Current: 75A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 25A Total Switching Energy(Ets): 4.2mJ Turn-on and Turn-off delay time: 50ns/560ns Testing Conditions: 600V, 25A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - IGW25T120 - 1045146-IGW25T120 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IGW25T120
1045146-IGW25T120
IGBTs - Single - IGW25T120 1045146-IGW25T120
Manufacturer: Infineon Technologies Win Source Part Number: 1045146-IGW25T120 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: NPT, Trench Field Stop Input Type: Standard Gate Charge: 155nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 190W Pulsed Collector Current: 75A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 25A Total Switching Energy(Ets): 4.2mJ Turn-on and Turn-off delay time: 50ns/560ns Testing Conditions: 600V, 25A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1045146-IGW25T120
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT, Trench Field Stop
Input Type: Standard
Gate Charge: 155nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 190W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 25A
Total Switching Energy(Ets): 4.2mJ
Turn-on and Turn-off delay time: 50ns/560ns
Testing Conditions: 600V, 25A, 22 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore, Singapore
1200V 50A IGBT Transistor
279-IGW25T120
1200V 50A IGBT Transistor 279-IGW25T120
IGBTs LOW LOSS IGBT TECH 1200V 50A Product overview: IGW25T120 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW25T120 can be used for catalog matching and distributor lookup.

IGBTs LOW LOSS IGBT TECH 1200V 50A Product overview: IGW25T120 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGW25T120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistors - IGW25T120 - ODG (Origin Data Global)
Shenzhen, China
Transistors
IGW25T120
Transistors IGW25T120
IGBT Transistors LOW LOSS IGBT TECH 1200V 50A

IGBT Transistors LOW LOSS IGBT TECH 1200V 50A

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
IGW25T120
IGBT Transistors IGW25T120
IGBT Transistors LOW LOSS IGBT TECH 1200V 50A

IGBT Transistors LOW LOSS IGBT TECH 1200V 50A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number 1045146-IGW25T120 279-IGW25T120 IGW25T120 IGW25T120
Product Name IGBTs - Single - IGW25T120 1200V 50A IGBT Transistor Transistors IGBT Transistors
VCE(on) 2.2 volts
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