The IGT65R035D2 is a 650 V enhancement-mode gallium nitride power transistor designed for high-efficiency power conversion in applications such as PFC, LLC converters, and SMPS. It is packaged in a PG-HSOF-8 bottom-side cooled package, with a thermal resistance from junction to case of 0.76 °C/W and a maximum power dissipation of 167 W at T_C = 25 °C. The device has a maximum drain-source on-resistance of 42 mΩ, a typical gate charge of 7.7 nC, and a pulsed drain current capability of 97 A. It exhibits zero reverse recovery charge, supports reverse conduction, and has a drain-source voltage transient rating of 900 V. The transistor is JEDEC qualified and operates with a junction temperature range of -55 °C to 150 °C.
The IGT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGT65R035D2 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGT65R035D2 |
| Package Type | PG-HSOF-8 |
