Infineon Technologies AG IGBT Discretes IGP40N65H5

Description
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. Summary of Features 650V breakthrough voltage Compared to Infineon’s Best-in-class HighSpeed 3 family Factor 2.5 lower Q g Factor 2 reduction in switching losses 200mV reduction in V CE(sat) Low C OES/E OSS Mild positive temperature coefficient V CE(sat) Temperature stability of V f Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50V increase in the bus voltage possible without compromising reliability Higher power density design
  • IGBT Discretes - IGP40N65H5 - Infineon Technologies AG
    Infineon Technologies AG
  • Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1345750-IGP40N65H5 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. Summary of Features 650V breakthrough voltage Compared to Infineon’s Best-in-class HighSpeed 3 family Factor 2.5 lower Q g Factor 2 reduction in switching losses 200mV reduction in V CE(sat) Low C OES/E OSS Mild positive temperature coefficient V CE(sat) Temperature stability of V f Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50V increase in the bus voltage possible without compromising reliability Higher power density design
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IGP40N65H5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IGP40N65H5
IGBT Discretes IGP40N65H5
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. Summary of Features 650V breakthrough voltage Compared to Infineon’s Best-in-class HighSpeed 3 family Factor 2.5 lower Q g Factor 2 reduction in switching losses 200mV reduction in V CE(sat) Low C OES/E OSS Mild positive temperature coefficient V CE(sat) Temperature stability of V f Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50V increase in the bus voltage possible without compromising reliability Higher power density design

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.


Summary of Features

  • 650V breakthrough voltage
  • Compared to Infineon’s Best-in-class HighSpeed 3 family
  • Factor 2.5 lower Q g
  • Factor 2 reduction in switching losses
  • 200mV reduction in V CE(sat)
  • Low C OES/E OSS
  • Mild positive temperature coefficient V CE(sat)
  • Temperature stability of V f

Benefits

  • Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
  • 50V increase in the bus voltage possible without compromising reliability
  • Higher power density design
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1345750-IGP40N65H5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1345750-IGP40N65H5
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1345750-IGP40N65H5
Win Source Part Number: 1345750-IGP40N65H5 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Series: TrenchStop™ 5 Package: Bulk Standard Package: 1 Power - Max: 250 W IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Switching Energy: 390µJ (on) , 120µJ (off) Input Type: Standard Gate Charge: 95 nC Test Condition: 400V, 20A, 15Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3 Temperature Range - Operating: -40°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Current - Collector (Ic) (Max): 74 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Td (on/off) @ 25°C: 22ns/165ns

Win Source Part Number: 1345750-IGP40N65H5
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Series: TrenchStop™ 5
Package: Bulk
Standard Package: 1
Power - Max: 250 W
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Switching Energy: 390µJ (on) , 120µJ (off)
Input Type: Standard
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Temperature Range - Operating: -40°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Current - Collector (Ic) (Max): 74 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Td (on/off) @ 25°C: 22ns/165ns

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
Through-Hole 650 V 74 A 250 W IGBT Transistor
279-IGP40N65H5
Through-Hole 650 V 74 A 250 W IGBT Transistor 279-IGP40N65H5
IGP40N65 - DISCRETE IGBT WITHOUT / IGBT Trench Field Stop 650 V 74 A 250 W Through Hole PG-TO220-3 Product overview: IGP40N65H5 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 650 V, 74 A, 250 W, TO220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 650 V, 74 A, 250 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGP40N65H5 can be used for catalog matching and distributor lookup.

IGP40N65 - DISCRETE IGBT WITHOUT / IGBT Trench Field Stop 650 V 74 A 250 W Through Hole PG-TO220-3 Product overview: IGP40N65H5 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 650 V, 74 A, 250 W, TO220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 650 V, 74 A, 250 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGP40N65H5 can be used for catalog matching and distributor lookup.

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IGP40N65H5
IGBT Transistors IGP40N65H5
IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IGP40N65H5 1345750-IGP40N65H5 279-IGP40N65H5 IGP40N65H5
Product Name IGBT Discretes Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Through-Hole 650 V 74 A 250 W IGBT Transistor IGBT Transistors
VCE(on) 650 volts
Switching Speed 30 to 100 kHz
tr 13 ns
tf 16 ns
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