650 V, 40 A IGBT Discrete in TO-247 package
Hard- switching 650 V, 40 A TRENCHSTOP™5 IGBT discrete in TO-247 package for high efficiency demands.
Summary of Features
650V breakthrough voltage
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stability of V f
Benefits
Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50V increase in the bus voltage possible without compromising reliability
Higher power density design
Applications
Uninterruptible power supplies (UPS)
650 V, 40 A IGBT Discrete in TO-247 package
Hard- switching 650 V, 40 A TRENCHSTOP™5 IGBT discrete in TO-247 package for high efficiency demands.
Summary of Features
- 650V breakthrough voltage
- Compared to Infineon’s Best-in-class HighSpeed 3 family
- Factor 2.5 lower Q g
- Factor 2 reduction in switching losses
- 200mV reduction in V CE(sat)
- Low C OES/E OSS
- Mild positive temperature coefficient V CE(sat)
- Temperature stability of V f
Benefits
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising reliability
- Higher power density design
Applications
- Uninterruptible power supplies (UPS)
