Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Summary of Features
650V breakthrough voltage
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stability of V f
Benefits
Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50V increase in the bus voltage possible without compromising reliability
Higher power density design
Applications
Offline UPS - high frequency transformers
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Summary of Features
- 650V breakthrough voltage
- Compared to Infineon’s Best-in-class HighSpeed 3 family
- Factor 2.5 lower Q g
- Factor 2 reduction in switching losses
- 200mV reduction in V CE(sat)
- Low C OES/E OSS
- Mild positive temperature coefficient V CE(sat)
- Temperature stability of V f
Benefits
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising reliability
- Higher power density design
Applications
- Offline UPS - high frequency transformers
