Infineon Technologies AG IGBT Discretes IGP15N60T

Description
600 V, 15 A IGBT Discrete in TO220 package Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled Diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability
  • IGBT Discretes - IGP15N60T - Infineon Technologies AG
    Infineon Technologies AG
  • IGBTs - Single - IGP15N60T - 1185269-IGP15N60T - Win Source Electronics
    Win Source Electronics
  • Transistors - IGP15N60T - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
600 V, 15 A IGBT Discrete in TO220 package Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled Diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IGP15N60T - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IGP15N60T
IGBT Discretes IGP15N60T
600 V, 15 A IGBT Discrete in TO220 package Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled Diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability

600 V, 15 A IGBT Discrete in TO220 package

Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.


Summary of Features

  • Lowest VCEsat drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
600V 15A IGBT Transistor
279-IGP15N60T
600V 15A IGBT Transistor 279-IGP15N60T
IGBTs LOW LOSS IGBT TECH 600V 15A Product overview: IGP15N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 15A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGP15N60T can be used for catalog matching and distributor lookup.

IGBTs LOW LOSS IGBT TECH 600V 15A Product overview: IGP15N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 15A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGP15N60T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - IGP15N60T - 1185269-IGP15N60T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IGP15N60T
1185269-IGP15N60T
IGBTs - Single - IGP15N60T 1185269-IGP15N60T
Manufacturer: Infineon Technologies Win Source Part Number: 1185269-IGP15N60T Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1185269-IGP15N60T
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now
Transistors - IGP15N60T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IGP15N60T
Transistors IGP15N60T
IGBT Transistors LOW LOSS IGBT TECH 600V 15A

IGBT Transistors LOW LOSS IGBT TECH 600V 15A

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IGP15N60T
IGBT Transistors IGP15N60T
IGBT Transistors LOW LOSS IGBT TECH 600V 15A

IGBT Transistors LOW LOSS IGBT TECH 600V 15A

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number IGP15N60T 279-IGP15N60T 1185269-IGP15N60T IGP15N60T IGP15N60T
Product Name IGBT Discretes 600V 15A IGBT Transistor IGBTs - Single - IGP15N60T Transistors IGBT Transistors
VCE(on) 600 volts
Switching Speed 2 to 20 kHz
tr 11 ns
tf 50 ns
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