The IGOT65R045D2 is a 650 V enhancement mode gallium nitride (GaN) transistor designed for high-efficiency power conversion in industrial, telecom, and data center applications. It is packaged in a PG-DSO-20 surface-mount package with dimensions of 15.75-16.50 mm in length and 13.90-14.50 mm in width. The device features a maximum drain-source on-state resistance of 54 mΩ at 25°C, a peak pulsed drain current of 76 A, and a gate charge of 6 nC. It supports reverse conduction with zero reverse recovery charge, exhibits superior commutation ruggedness, and meets JEDEC qualification standards. The maximum junction temperature is 150°C, with a thermal resistance from junction to case of 1.2 °C/W.
The IGOT65R045D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGOT65R045D2 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGOT65R045D2 |
| Package Type | PG-DSO-20 |
