The IGLT65R110B2 is a 650 V enhancement-mode bidirectional GaN switch in a PG-HDSOP-16 package, designed for high-power-density industrial applications. It features a monolithically integrated substrate voltage control circuit, dual-gate structure for independent bidirectional operation, and a typical on-resistance of 110 mΩ. The device supports a continuous source-to-source AC voltage of 340 V, a surge voltage of 850 V, and a pulsed current of ±37.5 A at 25°C. It is qualified according to JEDEC tests and meets the 2 kV HBM ESD standard. The thermal pad is for thermal coupling only and must be electrically isolated.
CoolGaN™ bidirectional switch 650 V G5 in TOLT, 110 mΩ
The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTM BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGLT65R110B2 |
| Product Name | Power - Gallium nitride (GaN) - GaN bidirectional switches - High-voltage GaN bidirectional switches - IGLT65R110B2 |
| Package Type | PG-HDSOP-16 |
