Infineon Technologies AG Power - Gallium nitride (GaN) - GaN bidirectional switches - High-voltage GaN bidirectional switches - IGLT65R110B2 IGLT65R110B2

Description
CoolGaN™ bidirectional switch 650 V G5 in TOLT, 110 mΩ The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTM BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies. Summary of Features 650 V bidirectional e-mode transistor Common-drain configuration Bidirectional blocking capability Low gate charge, low output charge Integrated substrate voltage control Qualfied according to JEDEC Stable RSS(on) across temp. and freq. Replacement of back-to-back switches Benefits Compact design Cost effective Low conduction loss Simplified design Short time-to-market Applications 1-phase string inverter solutions 3-phase string inverter solutions Microinverter solutions Motor Control Server power supply units (PSU)
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Description
CoolGaN™ bidirectional switch 650 V G5 in TOLT, 110 mΩ The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTM BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies. Summary of Features 650 V bidirectional e-mode transistor Common-drain configuration Bidirectional blocking capability Low gate charge, low output charge Integrated substrate voltage control Qualfied according to JEDEC Stable RSS(on) across temp. and freq. Replacement of back-to-back switches Benefits Compact design Cost effective Low conduction loss Simplified design Short time-to-market Applications 1-phase string inverter solutions 3-phase string inverter solutions Microinverter solutions Motor Control Server power supply units (PSU)
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
Power - Gallium nitride (GaN) - GaN bidirectional switches - High-voltage GaN bidirectional switches - IGLT65R110B2 - IGLT65R110B2 - Infineon Technologies AG
Neubiberg, Germany
Power - Gallium nitride (GaN) - GaN bidirectional switches - High-voltage GaN bidirectional switches - IGLT65R110B2
IGLT65R110B2
Power - Gallium nitride (GaN) - GaN bidirectional switches - High-voltage GaN bidirectional switches - IGLT65R110B2 IGLT65R110B2
CoolGaN™ bidirectional switch 650 V G5 in TOLT, 110 mΩ The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTM BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies. Summary of Features 650 V bidirectional e-mode transistor Common-drain configuration Bidirectional blocking capability Low gate charge, low output charge Integrated substrate voltage control Qualfied according to JEDEC Stable RSS(on) across temp. and freq. Replacement of back-to-back switches Benefits Compact design Cost effective Low conduction loss Simplified design Short time-to-market Applications 1-phase string inverter solutions 3-phase string inverter solutions Microinverter solutions Motor Control Server power supply units (PSU)

CoolGaN™ bidirectional switch 650 V G5 in TOLT, 110 mΩ

The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTM BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.


Summary of Features

  • 650 V bidirectional e-mode transistor
  • Common-drain configuration
  • Bidirectional blocking capability
  • Low gate charge, low output charge
  • Integrated substrate voltage control
  • Qualfied according to JEDEC
  • Stable RSS(on) across temp. and freq.
  • Replacement of back-to-back switches

Benefits

  • Compact design
  • Cost effective
  • Low conduction loss
  • Simplified design
  • Short time-to-market

Applications

  • 1-phase string inverter solutions
  • 3-phase string inverter solutions
  • Microinverter solutions
  • Motor Control
  • Server power supply units (PSU)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Transistors
Product Number IGLT65R110B2
Product Name Power - Gallium nitride (GaN) - GaN bidirectional switches - High-voltage GaN bidirectional switches - IGLT65R110B2
Package Type PG-HDSOP-16
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