The IGLT65R055B2 is a 650 V enhancement-mode bidirectional GaN switch in the PG-HDSOP-16 package, designed for high-power-density industrial applications. It features a typical on-state resistance of 55 mΩ, a continuous source-to-source AC voltage rating of 340 V, and a surge voltage immunity of 850 V. The device supports a pulsed current of ±73 A and operates with a junction temperature range from -40°C to 150°C. It meets JEDEC qualification standards and includes integrated substrate voltage control. The substrate thermal pad requires electrical isolation in system design.
CoolGaN™ bidirectional switch 650 V G5 in TOLT, 55 mΩ
The IGLT65R055B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaN™ BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGLT65R055B2 |
| Product Name | Power - Gallium nitride (GaN) - GaN bidirectional switches - High-voltage GaN bidirectional switches - IGLT65R055B2 |
| Package Type | PG-HDSOP-16 |
