The IGLD65R140D2 is a 650 V enhancement mode gallium nitride (GaN) transistor designed for high-efficiency power conversion in industrial, telecom, and data center applications. It is housed in a PG-LSON-8 package and supports ultra-fast switching with no reverse-recovery charge. The device has a maximum drain-source on-resistance of 170 mΩ, a pulsed drain current of 23 A, and a gate charge of 1.8 nC. It operates with a continuous drain current of 12 A at 25°C and a maximum junction temperature of 150°C. The transistor is fully qualified according to JEDEC for industrial applications and meets 2 kV HBM ESD standards.
The IGLD65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGLD65R140D2 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGLD65R140D2 |
| Package Type | PG-LSON-8 |
