The IGD08N120S7 is a 1200 V, 8 A TRENCHSTOP™ IGBT 7 discrete device in a PG-TO252-3 package, measuring 6.22 mm × 6.73 mm × 10.48 mm. It features a collector-emitter saturation voltage of 2 V at 150 °C junction temperature and provides 8 µs short-circuit ruggedness. The device has a maximum gate-emitter voltage of ±20 V, a junction-to-case thermal resistance of 0.87 to 1.17 K/W, and operates with a junction temperature range of -40 to 150 °C. It is qualified for industrial applications according to JEDEC J-STD-020, JESD47, JESD22, and meets RoHS compliance.
Hard-switching 1200 V, 8 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-252 package which offers low VCEsat to achieve very low conduction losses in target applications.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IGD08N120S7 |
| Product Name | Power - IGBT - IGBT Discretes - IGD08N120S7 |
| VCE(on) | 1200 volts |
| Switching Speed | 2 to 20 kHz |
| tr | 18 ns |
