Infineon Technologies AG Power - IGBT - IGBT Discretes - IGD03N120S7 IGD03N120S7

Description
Hard-switching 1200 V, 3 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-252 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features VCE = 1200 V IC = 3 A Low VCEsat = 2 V at Tvj = 150°C Short circuit ruggedness 8 µs Wide range of dv/dt controllability Benefits Compact design for high volt. aux-supply Reduced EMI min e-magnetic interference Applications Industrial motor drives and controls
  • Power - IGBT - IGBT Discretes - IGD03N120S7 - IGD03N120S7 - Infineon Technologies AG
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Description
Hard-switching 1200 V, 3 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-252 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features VCE = 1200 V IC = 3 A Low VCEsat = 2 V at Tvj = 150°C Short circuit ruggedness 8 µs Wide range of dv/dt controllability Benefits Compact design for high volt. aux-supply Reduced EMI min e-magnetic interference Applications Industrial motor drives and controls
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Datasheet
Datasheet Summary
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The IGD03N120S7 is a 1200 V, 3 A TRENCHSTOP™ IGBT 7 discrete device in a PG-TO252-3 package, measuring 6.22 mm maximum length, 6.73 mm maximum width, and 10.48 mm maximum height, designed for industrial motor drives. It features a collector-emitter saturation voltage of 2 V at 150 °C junction temperature, 8 µs short-circuit ruggedness, and a gate-emitter voltage rating of ±20 V. The device meets JEDEC J-STD-020 for soldering and is qualified for industrial applications per JEDEC47/20/22.

Datasheet Summary
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The IGD03N120S7 is a 1200 V, 3 A TRENCHSTOP™ IGBT 7 discrete device in a PG-TO252-3 package, measuring 6.22 mm maximum length, 6.73 mm maximum width, and 10.48 mm maximum height, designed for industrial motor drives. It features a collector-emitter saturation voltage of 2 V at 150 °C junction temperature, 8 µs short-circuit ruggedness, and a gate-emitter voltage rating of ±20 V. The device meets JEDEC J-STD-020 for soldering and is qualified for industrial applications per JEDEC47/20/22.

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Power - IGBT - IGBT Discretes - IGD03N120S7 - IGD03N120S7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Discretes - IGD03N120S7
IGD03N120S7
Power - IGBT - IGBT Discretes - IGD03N120S7 IGD03N120S7
Hard-switching 1200 V, 3 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-252 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features VCE = 1200 V IC = 3 A Low VCEsat = 2 V at Tvj = 150°C Short circuit ruggedness 8 µs Wide range of dv/dt controllability Benefits Compact design for high volt. aux-supply Reduced EMI min e-magnetic interference Applications Industrial motor drives and controls

Hard-switching 1200 V, 3 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-252 package which offers low VCEsat to achieve very low conduction losses in target applications.


Summary of Features

  • VCE = 1200 V
  • IC = 3 A
  • Low VCEsat = 2 V at Tvj = 150°C
  • Short circuit ruggedness 8 µs
  • Wide range of dv/dt controllability

Benefits

  • Compact design for high volt. aux-supply
  • Reduced EMI min e-magnetic interference

Applications

  • Industrial motor drives and controls
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IGD03N120S7
Product Name Power - IGBT - IGBT Discretes - IGD03N120S7
VCE(on) 1200 volts
Switching Speed 2 to 20 kHz
tr 18 ns
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