IGBT 1200V 3.2A 28W Surface Mount PG-TO252-3-11
Manufacturer: Infineon Technologies
Win Source Part Number: 776688-IGD01N120H2BU
Packaging: Reel package
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Power - Max: 28W
Current - Collector Pulsed (Icm): 3.5A
Switching Energy: 140μJ
Input Type: Standard
Gate Charge: 8.6nC
Td (on/off) @ 25°C: 13ns/370ns
Test Condition: 800V, 1A, 241 Ohm, 15V
Family Name: IGD01N120H2BUMA1
Categories: Discrete Semiconductor Products
Manufacturer Package: PG-TO252-3
Current - Collector (Ic) (Maximum): 3.2A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 2.8V @ 15V, 1A
Introduction Date: June 12, 2003
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
IGBT 1200V 3.2A 28W TO252-3 Product overview: IGD01N120H2BUMA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 3.2A, 28W, TO252. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 3.2A, 28W, TO252. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGD01N120H2BUMA1
IGBT 1200V 3.2A 28W TO252-3
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IGD01N120H2BUMA1TR-ND | 776688-IGD01N120H2BUMA1 | 279-IGD01N120H2BUMA1 | IGD01N120H2BUMA1 |
| Product Name | Single IGBTs | IGBTs - Single - IGD01N120H2BUMA1 | 1200V 3.2A 28W TO252 IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |