Infineon Technologies AG Single IGBTs IGD01N120H2BUMA1

Description
IGBT 1200V 3.2A 28W Surface Mount PG-TO252-3-11
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Description
IGBT 1200V 3.2A 28W Surface Mount PG-TO252-3-11
Request a Quote Datasheet

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Single IGBTs - IGD01N120H2BUMA1TR-ND - DigiKey
Thief River Falls, MN, United States
IGBT 1200V 3.2A 28W Surface Mount PG-TO252-3-11

IGBT 1200V 3.2A 28W Surface Mount PG-TO252-3-11

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IGBTs - Single - IGD01N120H2BUMA1 - 776688-IGD01N120H2BUMA1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IGD01N120H2BUMA1
776688-IGD01N120H2BUMA1
IGBTs - Single - IGD01N120H2BUMA1 776688-IGD01N120H2BUMA1
Manufacturer: Infineon Technologies Win Source Part Number: 776688-IGD01N120H2BU MA1 Packaging: Reel package Operating Temperature Range: -40°C ~ 150°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Power - Max: 28W Current - Collector Pulsed (Icm): 3.5A Switching Energy: 140μJ Input Type: Standard Gate Charge: 8.6nC Td (on/off) @ 25°C: 13ns/370ns Test Condition: 800V, 1A, 241 Ohm, 15V Family Name: IGD01N120H2BUMA1 Categories: Discrete Semiconductor Products Manufacturer Package: PG-TO252-3 Current - Collector (Ic) (Maximum): 3.2A Voltage - Collector Emitter Breakdown (Maximum): 1200V Vce(on) (Maximum) @ Vge, Ic: 2.8V @ 15V, 1A Introduction Date: June 12, 2003 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2024 Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 776688-IGD01N120H2BUMA1
Packaging: Reel package
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Power - Max: 28W
Current - Collector Pulsed (Icm): 3.5A
Switching Energy: 140μJ
Input Type: Standard
Gate Charge: 8.6nC
Td (on/off) @ 25°C: 13ns/370ns
Test Condition: 800V, 1A, 241 Ohm, 15V
Family Name: IGD01N120H2BUMA1
Categories: Discrete Semiconductor Products
Manufacturer Package: PG-TO252-3
Current - Collector (Ic) (Maximum): 3.2A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 2.8V @ 15V, 1A
Introduction Date: June 12, 2003
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IGD01N120H2BUMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IGD01N120H2BUMA1
Discrete Semiconductor Products - Transistors - IGBTs IGD01N120H2BUMA1
IGBT 1200V 3.2A 28W TO252-3

IGBT 1200V 3.2A 28W TO252-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IGD01N120H2BUMA1TR-ND 776688-IGD01N120H2BUMA1 IGD01N120H2BUMA1
Product Name Single IGBTs IGBTs - Single - IGD01N120H2BUMA1 Discrete Semiconductor Products - Transistors - IGBTs
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
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