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Infineon Technologies AG Power - IGBT - IGBT Bare Dies - IGC54T65T8RM IGC54T65T8RM

Description
The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Positive temperature coefficient Easy paralleling Qualified according to JEDEC for target applications Potential Applications
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Suppliers

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Product
Description
Supplier Links
Power - IGBT - IGBT Bare Dies - IGC54T65T8RM - IGC54T65T8RM - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Bare Dies - IGC54T65T8RM
IGC54T65T8RM
Power - IGBT - IGBT Bare Dies - IGC54T65T8RM IGC54T65T8RM
The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Positive temperature coefficient Easy paralleling Qualified according to JEDEC for target applications Potential Applications

The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry.


Summary of Features

  • Positive temperature coefficient
  • Easy paralleling
  • Qualified according to JEDEC for target applications

Potential Applications

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IGC54T65T8RM
Product Name Power - IGBT - IGBT Bare Dies - IGC54T65T8RM
VCE(on) 650 volts
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