Win Source Part Number: 1013921-FZ600R17KE4H
Category: Discrete Semiconductor Products>Transistors
Series: C
Package: Tray
Standard Package: 10
Power - Max: 3350 W
Configuration: Single
Input: Standard
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1200 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
NTC Thermistor: No
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Temperature Range - Operating: -40°C ~ 150°C
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000713626,FZ600R17
Base Product Number: FZ600R17
IGBT Module Trench Field Stop Single 1700V 1200A 3350W Chassis Mount Module
IGBT MOD 1700V 1200A 3350W Product overview: FZ600R17KE4HOSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 1200A, 3350W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1700V, 1200A, 3350W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FZ600R17KE4HOSA1
IGBT MOD 1700V 1200A 3350W
Trans IGBT Module N-CH 1.7KV 840A 4-pin 62MM-2
TRANSISTOR, IGBT MODULE, 1.7KV, 840A; Transistor Polarity:N Channel; DC Collector Current:840A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:3.35kW; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1013921-FZ600R17KE4HOSA1 | 448-FZ600R17KE4HOSA1-ND | 297-FZ600R17KE4HOSA1 | FZ600R17KE4HOSA1 | 376-FZ600R17KE4HOSA1 | 13AC8775 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Modules | IGBT Modules | 1700V 1200A 3350W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Trans IGBT Module N-CH 1.7KV 840A 4-pin 62MM-2 | Transistor, Igbt Module, 1.7Kv, 840A; Transistor Polarity Infineon |
| VCES | 1700 volts | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | |||
| Package Type | SOT3 | Module | Tray | TO-3 | ||
| PD | 3350 milliwatts | 3.35E6 milliwatts |
