FZ1800R45HL4 is an IHM-B module package IGBT module comprising trench/field-stop IGBT4 and emitter-controlled diodes, rated for 4500 V collector-emitter voltage and 1800 A continuous collector current, designed for high-power converters, medium-voltage converters, and power transmission and distribution applications. It features an isolated AlSiC base plate, >600 CTI insulation, 6.0 kV AC isolation withstand voltage, and operates from -40 °C to 150 °C. The module has a mass of 1200 g and complies with IEC 60747, IEC 60749, and IEC 60068 standards for industrial applications.
IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications.
Compared to its sister-type FZ1800R45HL4_S7, this standard type can be driven with up to VGE=15 V only.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FZ1800R45HL4 |
| Product Name | IGBT Modules |
| VCES | 4500 volts |
| VCE(on) | 2.35 volts |
| IC(max) | 1800 amps |
