Infineon Technologies AG IGBT Modules FZ1800R45HL4

Description
IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications. Compared to its sister-type FZ1800R45HL4_S7, this standard type can be driven with up to VGE=15 V only. Summary of Features Extremely low Static Losses Highest Dynamic Robustness High DC Stability Low VCEsat with positive Temperature Coefficient Benefits Unbeatable Robustness First Module to enable >3.5 GW HVDC Plants at 525 kV 20% higher Power Density (compared to the Competition Flagship) Standardized Housing eases Design and Maintenance Applications High voltage direct current (HVDC) Motor Control Power transmission and distribution Traction
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Description
IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications. Compared to its sister-type FZ1800R45HL4_S7, this standard type can be driven with up to VGE=15 V only. Summary of Features Extremely low Static Losses Highest Dynamic Robustness High DC Stability Low VCEsat with positive Temperature Coefficient Benefits Unbeatable Robustness First Module to enable >3.5 GW HVDC Plants at 525 kV 20% higher Power Density (compared to the Competition Flagship) Standardized Housing eases Design and Maintenance Applications High voltage direct current (HVDC) Motor Control Power transmission and distribution Traction
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - FZ1800R45HL4 - Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
FZ1800R45HL4
IGBT Modules FZ1800R45HL4
IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications. Compared to its sister-type FZ1800R45HL4_S7, this standard type can be driven with up to VGE=15 V only. Summary of Features Extremely low Static Losses Highest Dynamic Robustness High DC Stability Low VCEsat with positive Temperature Coefficient Benefits Unbeatable Robustness First Module to enable >3.5 GW HVDC Plants at 525 kV 20% higher Power Density (compared to the Competition Flagship) Standardized Housing eases Design and Maintenance Applications High voltage direct current (HVDC) Motor Control Power transmission and distribution Traction

IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications.

Compared to its sister-type FZ1800R45HL4_S7, this standard type can be driven with up to VGE=15 V only.


Summary of Features

  • Extremely low Static Losses
  • Highest Dynamic Robustness
  • High DC Stability
  • Low VCEsat with positive Temperature Coefficient

Benefits

  • Unbeatable Robustness
  • First Module to enable >3.5 GW HVDC Plants at 525 kV
  • 20% higher Power Density (compared to the Competition Flagship)
  • Standardized Housing eases Design and Maintenance

Applications

  • High voltage direct current (HVDC)
  • Motor Control
  • Power transmission and distribution
  • Traction
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FZ1800R45HL4
Product Name IGBT Modules
VCES 4500 volts
VCE(on) 2.35 volts
IC(max) 1800 amps
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