FZ1800R45HL4_S7 is an IHM-B package IGBT module with a 4500 V collector-emitter voltage rating and 1800 A continuous collector current, designed for high-power converter applications. The module integrates trench/field-stop IGBT4 and emitter-controlled diodes, with an isolated AlSiC base plate. It features a maximum gate-emitter voltage of ±26.25 V, an internal inductance of 6 nH, and a base plate with a creepage distance of 32.2 mm and clearance of 19.1 mm. The device complies with IEC 60747, IEC 60749, and IEC 60068 standards and operates with a storage temperature range of -40 °C to 150 °C. The module has a mass of 1200 g and is intended for industrial use, not automotive applications.
IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your HVDC application.
In comparison to the standard type the _S7 type can be driven with VGE=25 V instead of the usual 15 V
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FZ1800R45HL4_S7 |
| Product Name | IGBT Modules |
| VCES | 4500 volts |
| VCE(on) | 2.15 volts |
| IC(max) | 1800 amps |
