IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your HVDC application.
In comparison to the standard type the _S7 type can be driven with VGE=25 V instead of the usual 15 V
Summary of Features
Lowest static losses
Highest dynamic robustness
High short circuit capability, self-limiting short circuit current
Low VCEsat with positive temperature coefficient
Gate emitter voltage of 25 V
Benefits
Unbeatable robustness
First module to enable 1.4 GW HVDC Plants at 320 kV w/o paralleling
10% lower energy loss penalties possible (compared to the next best alternative)
Standardized housing eases design and maintenance
Applications
High voltage direct current (HVDC)
Motor Control
Power transmission and distribution
IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your HVDC application.
In comparison to the standard type the _S7 type can be driven with VGE=25 V instead of the usual 15 V
Summary of Features
- Lowest static losses
- Highest dynamic robustness
- High short circuit capability, self-limiting short circuit current
- Low VCEsat with positive temperature coefficient
- Gate emitter voltage of 25 V
Benefits
- Unbeatable robustness
- First module to enable 1.4 GW HVDC Plants at 320 kV w/o paralleling
- 10% lower energy loss penalties possible (compared to the next best alternative)
- Standardized housing eases design and maintenance
Applications
- High voltage direct current (HVDC)
- Motor Control
- Power transmission and distribution
