Infineon Technologies AG Power - IGBT - IGBT Modules - FZ1600R17HP4_B2 FZ1600R17HP4_B2

Description
1700 V IHMB 130mm single switch IGBT Module with soft-switching Trench-IGBT 4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. Summary of Features Extended operation temperature Tvj op Enlarged Diode for regenerative operation Low VCEsat 4 kV AC 1min insulation AlSiC Base Plate for increasing thermal cycling capability Package with CTI > 400 High creepage and clearance distances High power and thermal cycling capability UL recognised Benefits High power density Standardized housing Potential Applications Applications Central inverter solutions Traction
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Description
1700 V IHMB 130mm single switch IGBT Module with soft-switching Trench-IGBT 4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. Summary of Features Extended operation temperature Tvj op Enlarged Diode for regenerative operation Low VCEsat 4 kV AC 1min insulation AlSiC Base Plate for increasing thermal cycling capability Package with CTI > 400 High creepage and clearance distances High power and thermal cycling capability UL recognised Benefits High power density Standardized housing Potential Applications Applications Central inverter solutions Traction
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - IGBT Modules - FZ1600R17HP4_B2 - FZ1600R17HP4_B2 - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Modules - FZ1600R17HP4_B2
FZ1600R17HP4_B2
Power - IGBT - IGBT Modules - FZ1600R17HP4_B2 FZ1600R17HP4_B2
1700 V IHMB 130mm single switch IGBT Module with soft-switching Trench-IGBT 4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. Summary of Features Extended operation temperature Tvj op Enlarged Diode for regenerative operation Low VCEsat 4 kV AC 1min insulation AlSiC Base Plate for increasing thermal cycling capability Package with CTI > 400 High creepage and clearance distances High power and thermal cycling capability UL recognised Benefits High power density Standardized housing Potential Applications Applications Central inverter solutions Traction

1700 V IHMB 130mm single switch IGBT Module with soft-switching Trench-IGBT 4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications.


Summary of Features

  • Extended operation temperature Tvj op
  • Enlarged Diode for regenerative operation
  • Low VCEsat
  • 4 kV AC 1min insulation
  • AlSiC Base Plate for increasing thermal cycling capability
  • Package with CTI > 400
  • High creepage and clearance distances
  • High power and thermal cycling capability
  • UL recognised

Benefits

  • High power density
  • Standardized housing

Potential Applications


Applications

  • Central inverter solutions
  • Traction
Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Modules
FZ1600R17HP4_B2
IGBT Modules FZ1600R17HP4_B2
IGBT Modules IGBT 1700V 1600A

IGBT Modules IGBT 1700V 1600A

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Transistors FZ1600R17HP4_B2
IGBT Modules IGBT 1700V 1600A

IGBT Modules IGBT 1700V 1600A

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors
Product Number FZ1600R17HP4_B2 FZ1600R17HP4_B2 FZ1600R17HP4_B2
Product Name Power - IGBT - IGBT Modules - FZ1600R17HP4_B2 IGBT Modules Transistors
VCES 1700 volts
VCE(on) 1.9 volts
IC(max) 1600 amps
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