FZ1400R33HE4 is an IHM-B module for medium-voltage power conversion, featuring a TRENCHSTOP IGBT4 and emitter-controlled diode. It is rated for 3300 V collector-emitter voltage and 1400 A continuous collector current at a maximum junction temperature of 150°C, with a peak current of 2800 A. The module uses an AlSiC base plate for enhanced thermal cycling capability and has an insulated base with a comparative tracking index > 600. It complies with IEC 60747, IEC 60749, and IEC 60068 standards for industrial applications. The package dimensions are not specified, but mounting is via M6 screws with a torque of 4.25 to 5.75 Nm and M4 main terminal screws with a torque of 1.8 to 2.1 Nm. The mass is 800 g.
IHV-B 3300 V, 1400 A 130 mm single switch IGBT Module with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. The experienced solution for traction and industry applications.
Summary of Features
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AG-IHVB130-3 IGBTs RoHS
| Infineon Technologies AG | Utmel Electronic Limited | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FZ1400R33HE4 | 376-FZ1400R33HE4 |
| Product Name | IGBT Modules | AG-IHVB130-3 IGBTs RoHS |
| VCES | 3300 volts | |
| VCE(on) | 2.3 volts | |
| IC(max) | 1400 amps |